Min Hyuk Park
Electrical and Electronic Engineering · 2013–2021
A researcher in the Science corpus: 19 papers; trusts 12 researchers and is trusted by 10 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 291 citations into it; #3,868 of 16,539 by trust here, #1,808 by citations
- Materials Chemistry — 288 citations into it; #3,189 of 11,513 by trust here, #2,008 by citations
Whom Min Hyuk Park trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
- Johannes Müller
- Han Joon Kim
- Stefan Mueller
- C. S. Hwang
- Uwe Schroeder
- Y. Kim
- U. Schröder
- Sergej Starschich
- Tony Schenk
- Thomas Mikolajick
Who trusts Min Hyuk Park overall
- Thomas Mikolajick
- Han Joon Kim
- Sergej Starschich
- Uwe Schroeder
- Tony Schenk
- I. Fina
- E. Grimley
- Alireza Kashir
- Young Hwan Lee
- Robin Materlik
Papers from Min Hyuk Park's perspective
Ordered by how strongly the researchers Min Hyuk Park trusts endorse each paper. Same corpus, a different order for every researcher.
- Novel ferroelectric FET based synapse for neuromorphic systems (Symposium on VLSI Technology)
- Ferroelectricity in hafnium oxide thin films
- Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories (2013 IEEE International Electron Devices Meeting)
- A review of recent MOSFET threshold voltage extraction methods (Microelectronics and reliability)
- High dielectric constant gate oxides for metal oxide Si transistors
- Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films
- Vacancy and interstitial defects in hafnia
- Review on high-k dielectrics reliability issues (IEEE transactions on device and materials reliability)
- Vertical cell array using TCAT(Terabit Cell Array Transistor) technology for ultra high density NAND flash memory (Symposium on VLSI Technology)
- Pipe-shaped BiCS flash memory with 16 stacked layers and multi-level-cell operation for ultra high density storage devices (Symposium on VLSI Technology)
Their papers
- Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System (2017) — 161 citations
- A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants (2017) — 221 citations
- Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes (2013) — 171 citations
- Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors (2018) — 275 citations
- Thermodynamic and Kinetic Origins of Ferroelectricity in Fluorite Structure Oxides (2018) — 175 citations
- Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films (2015) — 1,047 citations
- Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer (2014) — 250 citations
- The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity (2014) — 372 citations
- Next generation ferroelectric materials for semiconductor process integration and their applications (2021) — 372 citations
- Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering (2019) — 142 citations
- Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping (2019) — 158 citations
- Review and perspective on ferroelectric HfO_2-based thin films for memory applications (2018) — 468 citations
- Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition (2016) — 136 citations
- Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric HfxZr1−xO2 films (2015) — 195 citations
- Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling (2015) — 152 citations
- Study on the degradation mechanism of the ferroelectric properties of thin Hf0.5Zr0.5O2 films on TiN and Ir electrodes (2014) — 156 citations
- Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2 films on TiN bottom and TiN or RuO2 top electrodes (2014) — 138 citations
- Thin HfxZr1‐xO2 Films: A New Lead‐Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability (2014) — 314 citations
- Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature (2013) — 725 citations