Uwe Schroeder
Materials Chemistry · 2003–2021
A researcher in the Science corpus: 27 papers; trusts 21 researchers and is trusted by 12 researchers here, as inferred from the citation graph.
Subfields
- Materials Chemistry — 491 citations into it; #2,691 of 11,513 by trust here, #1,924 by citations
- Electrical and Electronic Engineering — 483 citations into it; #2,491 of 16,539 by trust here, #1,400 by citations
Whom Uwe Schroeder trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
- Min Hyuk Park
- Johannes Müller
- Stefan Mueller
- Han Joon Kim
- Tony Schenk
- E. Grimley
- Sergej Starschich
- Thomas Mikolajick
Who trusts Uwe Schroeder overall
Papers from Uwe Schroeder's perspective
Ordered by how strongly the researchers Uwe Schroeder trusts endorse each paper. Same corpus, a different order for every researcher.
- Ferroelectricity in hafnium oxide thin films
- Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories (2013 IEEE International Electron Devices Meeting)
- A review of recent MOSFET threshold voltage extraction methods (Microelectronics and reliability)
- High dielectric constant gate oxides for metal oxide Si transistors
- Vacancy and interstitial defects in hafnia
- Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films
- Review on high-k dielectrics reliability issues (IEEE transactions on device and materials reliability)
- Pipe-shaped BiCS flash memory with 16 stacked layers and multi-level-cell operation for ultra high density storage devices (Symposium on VLSI Technology)
- Vertical cell array using TCAT(Terabit Cell Array Transistor) technology for ultra high density NAND flash memory (Symposium on VLSI Technology)
- Novel ferroelectric FET based synapse for neuromorphic systems (Symposium on VLSI Technology)
Their papers
- Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories (2016) — 263 citations
- Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors (2016) — 812 citations
- On the structural origins of ferroelectricity in HfO2 thin films (2015) — 575 citations
- Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO2 Thin Films (2016) — 387 citations
- Impact of different dopants on the switching properties of ferroelectric hafniumoxide (2014) — 283 citations
- Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System (2017) — 161 citations
- Stabilizing the ferroelectric phase in doped hafnium oxide (2015) — 523 citations
- Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2 (2016) — 207 citations
- A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants (2017) — 221 citations
- Incipient Ferroelectricity in Al‐Doped HfO2 Thin Films (2012) — 750 citations
- Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors (2018) — 275 citations
- About the deformation of ferroelectric hystereses (2014) — 177 citations
- Thermodynamic and Kinetic Origins of Ferroelectricity in Fluorite Structure Oxides (2018) — 175 citations
- Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films (2015) — 1,047 citations
- Next generation ferroelectric materials for semiconductor process integration and their applications (2021) — 372 citations
- The Past, the Present, and the Future of Ferroelectric Memories (2020) — 254 citations
- Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering (2019) — 142 citations
- Towards Oxide Electronics: a Roadmap (2019) — 167 citations
- Review and perspective on ferroelectric HfO_2-based thin films for memory applications (2018) — 468 citations
- Ferroelectric and piezoelectric properties of Hf1-xZrxO2 and pure ZrO2 films (2017) — 166 citations