Thomas Mikolajick
Materials Chemistry · 2011–2021
A researcher in the Science corpus: 40 papers; trusts 22 researchers and is trusted by 22 researchers here, as inferred from the citation graph.
Subfields
- Materials Chemistry — 473 citations into it; #1,200 of 11,513 by trust here, #1,022 by citations
- Electrical and Electronic Engineering — 467 citations into it; #1,312 of 16,539 by trust here, #775 by citations
Whom Thomas Mikolajick trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
- Min Hyuk Park
- Johannes Müller
- Uwe Schroeder
- Tony Schenk
- Sayeef Salahuddin
- Tengyu Ma
- E. Grimley
- Han Joon Kim
- Stefan Mueller
- Patrick Polakowski
Who trusts Thomas Mikolajick overall
Papers from Thomas Mikolajick's perspective
Ordered by how strongly the researchers Thomas Mikolajick trusts endorse each paper. Same corpus, a different order for every researcher.
- Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories (2013 IEEE International Electron Devices Meeting)
- A review of recent MOSFET threshold voltage extraction methods (Microelectronics and reliability)
- Ferroelectricity in hafnium oxide thin films
- Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films
- High dielectric constant gate oxides for metal oxide Si transistors
- Vacancy and interstitial defects in hafnia
- Review on high-k dielectrics reliability issues (IEEE transactions on device and materials reliability)
- Vertical cell array using TCAT(Terabit Cell Array Transistor) technology for ultra high density NAND flash memory (Symposium on VLSI Technology)
- Pipe-shaped BiCS flash memory with 16 stacked layers and multi-level-cell operation for ultra high density storage devices (Symposium on VLSI Technology)
- Novel ferroelectric FET based synapse for neuromorphic systems (Symposium on VLSI Technology)
Their papers
- A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs (2016) — 356 citations
- Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories (2016) — 263 citations
- Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories (2013) — 375 citations
- A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond (2017) — 451 citations
- Novel ferroelectric FET based synapse for neuromorphic systems (2017) — 200 citations
- Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors (2016) — 812 citations
- Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO2 Thin Films (2016) — 387 citations
- Impact of different dopants on the switching properties of ferroelectric hafniumoxide (2014) — 283 citations
- Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System (2017) — 161 citations
- Stabilizing the ferroelectric phase in doped hafnium oxide (2015) — 523 citations
- Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG (2012) — 264 citations
- Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2 (2016) — 207 citations
- A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants (2017) — 221 citations
- Phase transitions in ferroelectric silicon doped hafnium oxide (2011) — 336 citations
- Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films (2013) — 160 citations
- Incipient Ferroelectricity in Al‐Doped HfO2 Thin Films (2012) — 750 citations
- Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors (2018) — 275 citations
- Ferroelectricity in Simple Binary ZrO2 and HfO2. (2012) — 1,541 citations
- Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$ (2012) — 143 citations
- About the deformation of ferroelectric hystereses (2014) — 177 citations