Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System

By C. Richter, Tony Schenk, Min Hyuk Park, Franziska A. Tscharntke, E. Grimley, James M. LeBeau, Chuanzhen Zhou, C. Fancher, Jacob L. Jones, Thomas Mikolajick and 1 more. 2017

161 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a49182cef895f1f795dcbfa7a3d8807af795ecd9

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Uwe Schroeder
2. Thomas Mikolajick
3. Tony Schenk
4. James M. LeBeau
5. E. Grimley
6. Stefan Slesazeck
7. Min Hyuk Park
8. Sergej Starschich

In Materials Chemistry

1. Uwe Schroeder
2. Thomas Mikolajick
3. Stefan Slesazeck
4. Tony Schenk
5. James M. LeBeau
6. E. Grimley
7. Min Hyuk Park

Citations in the corpus

• The Past, the Present, and the Future of Ferroelectric Memories (2020, background): “Moreover, it is very hard to achieve stable ferroelectricity in polycrystalline layers of only 2–3 nm of thickness even if ferroelectric hafnium oxide is used [95].”
• Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2 (2017, background): “Critically, the net electrical behavior is strongly governed by the fractions of each phase in a given device.(12,13,17) First-principles calculations suggest that various forces contribute to stabilizing the different distorted fluorite phases of HfO2, enabling ferroelectric switching, and/or possi”