A review of recent MOSFET threshold voltage extraction methods

By Adelmo Ortiz-Conde, F. García-Sánchez, J. Liou, A. Cerdeira, M. Estrada, Y. Yue. Microelectronics and reliability, 2002

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Electrical characterization of 2D materials-based field-effect transistors (2020, methodology): “Various methods are employed to extract the VTH from the transfer characteristics, such as linear region extrapolation, transconductance linear extrapolation (VGS versus gm), second-derivative of transconductance, andGhibaudo’smethod (intercept ofVGS versus ID/g m ) [49].”
Revisiting MOSFET threshold voltage extraction methods (2013, background): “determined by mobility degradation and the presence of source and drain series parasitic resistances, when they are significant [3].”
Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories (2016, methodology): “The VTH values were extracted using a constant drain current criterion ITH of 3 · 10−6 A · (WG/LG) [29], [30].”
High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty (2018, methodology): “The threshold voltage (VT ) is extracted from the program/erase (PG/ER) Id –Vg curves using the constant current (10−8) criteria [9], while the MW is calculated as the difference between the ER and PG VT values.”
Graphene Nanoribbon Tunnel Transistors (2008, methodology): “19 mV/dec, using a current per unit width of 100 nA/LCH [19] to define the threshold voltage, indicated in Fig.”
Process Technology Variation (2011, methodology): “(Right) “Constant current” method [32] of VT measurement, showing the arbitrary selection of current.”