Stefan Mueller

Electrical and Electronic Engineering · 2012–2015

A researcher in the Science corpus: 6 papers; trusts 2 researchers and is trusted by 7 researchers here, as inferred from the citation graph.

Subfields

Whom Stefan Mueller trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Johannes Müller
  2. U. Schröder
  3. J. Scott

Who trusts Stefan Mueller overall

  1. Min Hyuk Park
  2. Sergej Starschich
  3. Uwe Schroeder
  4. Tony Schenk
  5. Han Joon Kim
  6. Thomas Mikolajick
  7. Johannes Müller
  8. Nanbo Gong

Papers from Stefan Mueller's perspective

Ordered by how strongly the researchers Stefan Mueller trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Ferroelectricity in hafnium oxide thin films
  2. Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories (2013 IEEE International Electron Devices Meeting)
  3. A review of recent MOSFET threshold voltage extraction methods (Microelectronics and reliability)
  4. A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs (International Electron Devices Meeting)
  5. Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories (IEEE Transactions on Electron Devices)
  6. Why Is FE–HfO2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective (IEEE Electron Device Letters)
  7. Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG (Symposium on VLSI Technology)
  8. VARIOT: a novel multilayer tunnel barrier concept for low-voltage nonvolatile memory devices (IEEE Electron Device Letters)
  9. A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation (IEEE Electron Device Letters)
  10. Vacancy and interstitial defects in hafnia

Their papers