Han Joon Kim
Materials Chemistry · 2013–2015
A researcher in the Science corpus: 10 papers; trusts 6 researchers and is trusted by 5 researchers here, as inferred from the citation graph.
Subfields
- Materials Chemistry — 106 citations into it; #4,165 of 11,513 by trust here, #2,379 by citations
- Electrical and Electronic Engineering — 92 citations into it; #6,139 of 16,539 by trust here, #2,124 by citations
Whom Han Joon Kim trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Han Joon Kim overall
- Min Hyuk Park
- Sergej Starschich
- Thomas Mikolajick
- Uwe Schroeder
- Alireza Kashir
- Tony Schenk
- Young Hwan Lee
- Z. Fan
- Robin Materlik
Papers from Han Joon Kim's perspective
Ordered by how strongly the researchers Han Joon Kim trusts endorse each paper. Same corpus, a different order for every researcher.
- Novel ferroelectric FET based synapse for neuromorphic systems (Symposium on VLSI Technology)
- Ferroelectricity in hafnium oxide thin films
- Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories (2013 IEEE International Electron Devices Meeting)
- A review of recent MOSFET threshold voltage extraction methods (Microelectronics and reliability)
- Physical properties of crystals
- High dielectric constant gate oxides for metal oxide Si transistors
- Vacancy and interstitial defects in hafnia
- Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films
- Review on high-k dielectrics reliability issues (IEEE transactions on device and materials reliability)
- Pipe-shaped BiCS flash memory with 16 stacked layers and multi-level-cell operation for ultra high density storage devices (Symposium on VLSI Technology)
Their papers
- Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes (2013) — 171 citations
- Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films (2015) — 1,047 citations
- Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer (2014) — 250 citations
- The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity (2014) — 372 citations
- Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric HfxZr1−xO2 films (2015) — 195 citations
- Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling (2015) — 152 citations
- Study on the degradation mechanism of the ferroelectric properties of thin Hf0.5Zr0.5O2 films on TiN and Ir electrodes (2014) — 156 citations
- Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2 films on TiN bottom and TiN or RuO2 top electrodes (2014) — 138 citations
- Thin HfxZr1‐xO2 Films: A New Lead‐Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability (2014) — 314 citations
- Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature (2013) — 725 citations