Vacancy and interstitial defects in hafnia

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Review on high-k dielectrics reliability issues (2005, background): “Among these defects, interstitial oxygen atoms and positively charged oxygen vacancies are suspected of playing a significant role in the observed instability since they can trap electrons from the bottom of the hafnia conduction band and from silicon (results of ab initio calculations [ 22 ]).”
Electronic properties of hafnium oxide: A contribution from defects and traps (2016, unknown): “[37] have for the first time performed an ab initio simulation of VO in HfO2 within the classical density functional theory (DFT) with a basic wave-function set chosen in the form of plane waves.”
Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories (2016, background): “Oxygen vacancies [11], [20], [21] and oxygen interstitial atoms [11], [21], [22] are considered to be the main origin of traps in HfO2-based materials.”
A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks (2011, background): “[40]) acts as trapping center for holes in the HfO2.”