High dielectric constant gate oxides for metal oxide Si transistors

By John Robertson. 2006

1,559 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/6de9bd82d076729d518b2c30b5fbd162ee803bec

How researchers see this paper

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In Electrical and Electronic Engineering

1. Uwe Schroeder
2. Thomas Mikolajick
3. Rampi Ramprasad
4. Tran Doan Huan
5. S. Troughton
6. Rohit Batra
7. T. W. Clyne
8. Andreas Kerber

Citations in the corpus

• Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories (2016, background): “includes electrons from the d-shells [10], [11] in combination with a high coordination number represents the main”
• Dopants Promoting Ferroelectricity in Hafnia: Insights from a comprehensive Chemical Space Exploration (2017, result): “el, (4) for some doped cases, the T and even the P-O2 phase collapsed into the P-O1 phase upon relaxation, suggesting that these dopants prefer to form the relatively low energy polar P-O1 phase, and (5) between the two polar phases considered, i.e., P-O1 and P-O2, the former is clearly favored over”