Pipe-shaped BiCS flash memory with 16 stacked layers and multi-level-cell operation for ultra high density storage devices

By Ryota Katsumata, M. Kito, Yoshiaki Fukuzumi, M. Kido, Hiroyasu Tanaka, Y. Komori, M. Ishiduki, Junya Matsunami, Tomoko Fujiwara, Y. Nagata and 5 more. Symposium on VLSI Technology, 2006

234 citations recorded by the source corpus.

View Paper: https://www.semanticscholar.org/paper/99853a4ca2cf91d0318401259bb782e6e1858d77

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1. Thomas Mikolajick
2. Uwe Schroeder
3. M. Pešić
4. E. Yurchuk
5. J. Muller
6. S. Muller
7. J. Paul
8. R. van Bentum

Citations in the corpus

• Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories (2016, methodology): “Scaling below the 28-nm technology node can be continued by fabricating FeFETs in nonplanar configurations such as FinFET devices or 3-D memory array architectures [3], [4].”