A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants

By Min Hyuk Park, Tony Schenk, C. Fancher, E. Grimley, Chuanzhen Zhou, C. Richter, James M. LeBeau, Jacob L. Jones, Thomas Mikolajick, Uwe Schroeder. 2017

221 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/361f91064fe948567871390a63a04d88d2a75a3c

How researchers see this paper

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In Electrical and Electronic Engineering

1. Uwe Schroeder
2. Thomas Mikolajick
3. Tony Schenk
4. James M. LeBeau
5. E. Grimley
6. Min Hyuk Park
7. Sergej Starschich
8. Stefan Slesazeck

In Materials Chemistry

1. Uwe Schroeder
2. Thomas Mikolajick
3. Tony Schenk
4. James M. LeBeau
5. E. Grimley
6. Min Hyuk Park

Citations in the corpus

• Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2 (2017, background): “Critically, the net electrical behavior is strongly governed by the fractions of each phase in a given device.(12,13,17) First-principles calculations suggest that various forces contribute to stabilizing the different distorted fluorite phases of HfO2, enabling ferroelectric switching, and/or possi”