Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

By Thomas Mikolajick, Stefan Slesazeck, Min Hyuk Park, Uwe Schroeder. MRS bulletin, 2018

275 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/fe53d00ff3e44c04a6f3ab715b8e047776824645

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Uwe Schroeder
2. Thomas Mikolajick
3. Stefan Slesazeck
4. Min Hyuk Park
5. Tony Schenk

In Materials Chemistry

1. Uwe Schroeder
2. Stefan Slesazeck
3. Thomas Mikolajick
4. Min Hyuk Park

Citations in the corpus

• The Past, the Present, and the Future of Ferroelectric Memories (2020, background): “Second, the ferroelectric can be implemented as part of the gate dielectric of a ferroelectric field effect transistor (FeFET) [4].”