Novel ferroelectric FET based synapse for neuromorphic systems

By H. Mulaosmanovic, J. Ocker, S. Müller, M. Noack, Johannes Müller, Patrick Polakowski, Thomas Mikolajick, Stefan Slesazeck. Symposium on VLSI Technology, 2017

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Review and perspective on ferroelectric HfO_2-based thin films for memory applications (2018, background): “HfO2 have also been suggested to be useful for neuromorphic devices and random-number generators.([19,20])”
Neuro-Inspired Computing With Emerging Nonvolatile Memorys (2018, background): “, the doped HfO2) to gradually tune the gate capacitance and consequently the threshold voltage and the channel conductance by the application of short voltage pulses to the gate [86], [87].”
The Past, the Present, and the Future of Ferroelectric Memories (2020, background): “can be operated in a subloop condition to either allow a very high cycling endurance [79] or adjust a large number of polarization values that can be used for analog storage like in neuromorphic computing [80], scaled-down devices show a limited number of threshold voltage (VT ) levels that can be r”