Review and perspective on ferroelectric HfO_2-based thin films for memory applications

By Min Hyuk Park, Young Hwan Lee, Thomas Mikolajick, Uwe Schroeder, C. S. Hwang. MRS Communications, 2018

468 citations recorded by the source corpus.

The ferroelectricity in fluorite-structure oxides such as hafnia and zirconia has attracted increasing interest since 2011. They have various advantages such as Si-based complementary metal oxide semiconductor-compatibility, matured deposition techniques, a low dielectric constant and the resulting decreased depolarization field, and stronger resistance to hydrogen annealing. However, the wake-up effect, imprint, and insufficient endurance are remaining reliability issues. Therefore, this paper reviews two major aspects: the advantages of fluorite-structure ferroelectrics for memory applications are reviewed from a material’s point of view, and the critical issues of wake-up effect and insufficient endurance are examined, and potential solutions are subsequently discussed.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/803144c27bdee14ab0620c7d034d7244beb046d8