Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films

By Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Yumin Kim, Tae-Houng Moon, Keum Do Kim, Johannes Müller, Alfred Kersch, Uwe Schroeder, Thomas Mikolajick and 1 more. Advances in Materials, 2015

1,047 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/b9b7030b91903625a54325ef168389987c03143e

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In Electrical and Electronic Engineering

1. Hyunsang Hwang
2. Seungyeol Oh
3. Hyungwoo Kim
4. Alireza Kashir

Citations in the corpus

• Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering (2021, background): “These high-temperature phases are achievable in HfO2 thin films at room temperature (RT) [3-14].”