Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

By J. Muller, T. Boscke, S. Muller, E. Yurchuk, Patrick Polakowski, J. Paul, D. Martin, Tony Schenk, K. Khullar, Alfred Kersch and 11 more. 2013 IEEE International Electron Devices Meeting, 2013

375 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/8fbf8b04cba17f146e33bcab51c7f8352ca811dc

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Thomas Mikolajick
2. Uwe Schroeder
3. Patrick Polakowski
4. Supriyo Datta
5. An Chen
6. Souvik Mahapatra
7. R. Clark
8. Mark S. Lundstrom

In Materials Chemistry

1. Uwe Schroeder
2. Thomas Mikolajick
3. Patrick Polakowski
4. Supriyo Datta
5. An Chen
6. Min Hyuk Park

Citations in the corpus

• Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance (2018, background): “THE discovery of ferroelectricity in doped HfO2 has triggered significant interest in FeFET-based nonvolatile memory (NVM), due to its scalability and CMOS compatibility [1].”
• A review of emerging non-volatile memory (NVM) technologies and applications (2016, background): “A recent discovery of ferroelectricity in doped HfO x has reignited interest in FeFET [37].”
• Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories (2016, background): “8 mol% of silicon (Si:HfO2) were shown to exhibit ferroelectric properties in a wide temperature range between −100 °C and 200 °C [5].”
• High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty (2018, background): “ture [19] and at high temperature with accelerated testing [20].”