C. S. Hwang
Electrical and Electronic Engineering · 2002–2019
A researcher in the Science corpus: 40 papers; trusts 16 researchers and is trusted by 17 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 435 citations into it; #1,886 of 16,539 by trust here, #660 by citations
- Materials Chemistry — 287 citations into it; #2,176 of 11,513 by trust here, #869 by citations
- Cellular and Molecular Neuroscience — 99 citations into it
- Polymers and Plastics — 72 citations into it; #2,339 of 2,623 by trust here, #479 by citations
Whom C. S. Hwang trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts C. S. Hwang overall
Papers from C. S. Hwang's perspective
Ordered by how strongly the researchers C. S. Hwang trusts endorse each paper. Same corpus, a different order for every researcher.
- The organization of behavior.
- SPIKING NEURON MODELS Single Neurons , Populations , Plasticity
- A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications. (Nano letters (Print))
- The missing memristor found (Nature)
- Central Sensitization: A Generator of Pain Hypersensitivity by Central Neural Plasticity (Journal of Pain)
- Predicting Structured Data
- Neural Engineering: Computation, Representation, and Dynamics in Neurobiological Systems (IEEE Transactions on Neural Networks)
- An Investigation of the Laws of Thought: On which are founded the mathematical theories of logic and probabilities
- Cellular and Molecular Mechanisms of Pain (Cell)
- Nociceptor sensitization in pain pathogenesis (Nature Medicine)
Their papers
- Multifunctional wearable devices for diagnosis and therapy of movement disorders. (2014) — 1,347 citations
- Thickness-dependent dielectric constants of (Ba,Sr)TiO3 thin films with Pt or conducting oxide electrodes (2002) — 144 citations
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. (2010) — 1,966 citations
- Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition (2005) — 1,106 citations
- Memristors for Energy‐Efficient New Computing Paradigms (2016) — 349 citations
- Emerging memories: resistive switching mechanisms and current status (2012) — 1,027 citations
- Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook (2011) — 604 citations
- Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films (2007) — 210 citations
- Identification of a determining parameter for resistive switching of TiO2 thin films (2005) — 326 citations
- Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes (2013) — 171 citations
- The conical shape filament growth model in unipolar resistance switching of TiO2 thin film (2009) — 144 citations
- A Review of Three‐Dimensional Resistive Switching Cross‐Bar Array Memories from the Integration and Materials Property Points of View (2014) — 356 citations
- First-principles study of point defects in rutileTiO2−x (2006) — 184 citations
- Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films (2007) — 419 citations
- Thermodynamic and Kinetic Origins of Ferroelectricity in Fluorite Structure Oxides (2018) — 175 citations
- Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films (2015) — 1,047 citations
- Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer (2014) — 250 citations
- The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity (2014) — 372 citations
- Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors (2011) — 275 citations
- Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping (2019) — 158 citations