Tony Schenk
Materials Chemistry · 2013–2017
A researcher in the Science corpus: 13 papers; trusts 8 researchers and is trusted by 6 researchers here, as inferred from the citation graph.
Subfields
- Materials Chemistry — 189 citations into it; #6,817 of 11,513 by trust here, #3,816 by citations
- Electrical and Electronic Engineering — 170 citations into it; #4,890 of 16,539 by trust here, #2,333 by citations
Whom Tony Schenk trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
- Min Hyuk Park
- Johannes Müller
- Uwe Schroeder
- E. Grimley
- Stefan Mueller
- Sergej Starschich
- Han Joon Kim
Who trusts Tony Schenk overall
Papers from Tony Schenk's perspective
Ordered by how strongly the researchers Tony Schenk trusts endorse each paper. Same corpus, a different order for every researcher.
- Ferroelectric solid solutions with morphotropic boundaries: Vanishing polarization anisotropy, adaptive, polar glass, and two-phase states
- Influence of short-range and long-range order on the evolution of the morphotropic phase boundary in Pb Zr[sub 1−x]Ti[sub x] O₃
- Factors Favoring Ferroelectricity in Hafnia: A First-Principles Computational Study
- Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System
- Ferroelectricity in hafnium oxide thin films
- A review of recent MOSFET threshold voltage extraction methods (Microelectronics and reliability)
- Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories (2013 IEEE International Electron Devices Meeting)
- Novel ferroelectric FET based synapse for neuromorphic systems (Symposium on VLSI Technology)
- High dielectric constant gate oxides for metal oxide Si transistors
- Vacancy and interstitial defects in hafnia
Their papers
- Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories (2013) — 375 citations
- Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors (2016) — 812 citations
- On the structural origins of ferroelectricity in HfO2 thin films (2015) — 575 citations
- Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO2 Thin Films (2016) — 387 citations
- Impact of different dopants on the switching properties of ferroelectric hafniumoxide (2014) — 283 citations
- Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System (2017) — 161 citations
- Stabilizing the ferroelectric phase in doped hafnium oxide (2015) — 523 citations
- A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants (2017) — 221 citations
- About the deformation of ferroelectric hystereses (2014) — 177 citations
- Ferroelectric and piezoelectric properties of Hf1-xZrxO2 and pure ZrO2 films (2017) — 166 citations
- Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2 (2017) — 156 citations
- Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight (2014) — 227 citations
- Wake-up effects in Si-doped hafnium oxide ferroelectric thin films (2013) — 347 citations