Young Hwan Lee
Materials Chemistry · 2014–2018
A researcher in the Science corpus: 5 papers; trusts 4 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Materials Chemistry — 117 citations into it
- Electrical and Electronic Engineering — 113 citations into it
Whom Young Hwan Lee trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Papers from Young Hwan Lee's perspective
Ordered by how strongly the researchers Young Hwan Lee trusts endorse each paper. Same corpus, a different order for every researcher.
- Novel ferroelectric FET based synapse for neuromorphic systems (Symposium on VLSI Technology)
- Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
- Ferroelectricity in hafnium oxide thin films
- High dielectric constant gate oxides for metal oxide Si transistors
- A review of recent MOSFET threshold voltage extraction methods (Microelectronics and reliability)
- Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories (2013 IEEE International Electron Devices Meeting)
- Vacancy and interstitial defects in hafnia
- Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films
- Ferroelectric solid solutions with morphotropic boundaries: Vanishing polarization anisotropy, adaptive, polar glass, and two-phase states
- Influence of short-range and long-range order on the evolution of the morphotropic phase boundary in Pb Zr[sub 1−x]Ti[sub x] O₃
Their papers
- Thermodynamic and Kinetic Origins of Ferroelectricity in Fluorite Structure Oxides (2018) — 175 citations
- Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films (2015) — 1,047 citations
- Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer (2014) — 250 citations
- Review and perspective on ferroelectric HfO_2-based thin films for memory applications (2018) — 468 citations
- Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling (2015) — 152 citations