Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films

By E. Yurchuk, Johannes Müller, S. Knebel, J. Sundqvist, A. Graham, T. Melde, U. Schröder, Thomas Mikolajick. 2013

160 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/655abb9822ad310bcb1182f391e9e99f2addcd98

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Uwe Schroeder
2. Thomas Mikolajick
3. Nanbo Gong
4. T. Ma
5. Min Hyuk Park
6. Stefan Slesazeck
7. Tony Schenk

In Materials Chemistry

1. Uwe Schroeder
2. Thomas Mikolajick
3. T. Ma
4. Nanbo Gong
5. Min Hyuk Park

Citations in the corpus

• Why Is FE–HfO2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective (2016, background): “In other word, even though remnant polarization in an “engineered” MFM structure of HfO2 based ferroelectric could be made larger than 10μC/cm2 [8], [11], [23], [24], it does not pay to increase the remnant polarization beyond ∼10μC/cm2 from the MW point of view.”
• Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories (2016, background): “SiO2 doping of 3–4 mol% enables the stabilization of a ferroelectric phase (orthorhombic Pbc21) and, thus, obtaining the ferroelectric behavior in HfO2 films [7], [31].”