Robin Materlik
Materials Chemistry · 2015–2018
A researcher in the Science corpus: 3 papers; trusts 4 researchers and is trusted by 2 researchers here, as inferred from the citation graph.
Subfields
- Materials Chemistry — 72 citations into it; #8,618 of 11,513 by trust here, #5,878 by citations
- Electrical and Electronic Engineering — 65 citations into it; #12,801 of 16,539 by trust here, #5,309 by citations
Whom Robin Materlik trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Robin Materlik overall
Papers from Robin Materlik's perspective
Ordered by how strongly the researchers Robin Materlik trusts endorse each paper. Same corpus, a different order for every researcher.
- Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$ (IEEE Electron Device Letters)
- Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications
- Novel ferroelectric FET based synapse for neuromorphic systems (Symposium on VLSI Technology)
- Ferroelectricity in hafnium oxide thin films
- Electronic Structure: Basic Theory and Practical Methods
- A review of recent MOSFET threshold voltage extraction methods (Microelectronics and reliability)
- Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories (2013 IEEE International Electron Devices Meeting)
- Efficient projector expansion for the ab initio LCAO method
- Ab initio molecular simulations with numeric atom-centered orbitals
- AFLOW: An automatic framework for high-throughput materials discovery
Their papers
- The Origin of Ferroelectricity in Hf$_{x}$ Zr$_{1-x}$ O$_2$: A Computational Investigation and a Surface Energy Model (2015) — 772 citations
- Stabilizing the ferroelectric phase in doped hafnium oxide (2015) — 523 citations
- Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study (2018) — 140 citations