The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

By Min Hyuk Park, Han Joon Kim, Y. Kim, Tae-Houng Moon, C. S. Hwang. 2014

372 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/9fb3cb299e1349bf9b18d4dd6d07cf58ad647338

How researchers see this paper

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In Electrical and Electronic Engineering

1. Hyunsang Hwang
2. Seungyeol Oh
3. Hyungwoo Kim
4. Alireza Kashir

Citations in the corpus

• Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering (2021, background): “Because, the longest axis of the t-phase should become longer, and the shorter axes should become shorter to transform it to the o-phase [19].”