Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes

By Min Hyuk Park, Han Joon Kim, Y. Kim, Woongkyu Lee, Hyo Kyeom Kim, C. S. Hwang. 2013

171 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/88c24a8e9a8822a8c0058286a95fd4a638c1c910

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Uwe Schroeder
2. Thomas Mikolajick
3. Stefan Slesazeck
4. Hyunsang Hwang
5. Seungyeol Oh
6. Hyungwoo Kim
7. Alireza Kashir
8. Min Hyuk Park

In Materials Chemistry

1. Uwe Schroeder
2. Stefan Slesazeck
3. Thomas Mikolajick
4. Min Hyuk Park

Citations in the corpus

• Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering (2021, background): “Moreover, the experimental results showed that the Pt electrode acts as a catalyst during the forming gas annealing for H-incorporation, resulting in a substantial decrease in the 2Pr value [24].”
• The Past, the Present, and the Future of Ferroelectric Memories (2020, background): “Indeed, the sensitivity to hydrogen is not a severe issue [45] and deposition into 3-D structures results in almost the full expected gain in signal [46].”