Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer

By Han Joon Kim, Min Hyuk Park, Y. Kim, Young Hwan Lee, W. Jeon, Taehong Gwon, Tae-Houng Moon, Keum Do Kim, C. S. Hwang. 2014

250 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/83c25be4d6b4d49fb849917d01f8b2d92d1d5dd9

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In Electrical and Electronic Engineering

1. Hyunsang Hwang
2. Seungyeol Oh
3. Hyungwoo Kim
4. Alireza Kashir

Citations in the corpus

• Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering (2021, background): “It is known that in nanoparticles of radius r, the surface energy (σ) produces a large internal pressure (P=2σ/r), which can facilitate the formation of the ferroelectric o-phase [9, 11, 38].”