Y. Kim
Electrical and Electronic Engineering · with Kim · 2013–2015
A researcher in the Science corpus: 8 papers; trusts 1 researcher and is trusted by 6 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 67 citations into it; #6,380 of 16,539 by trust here, #2,869 by citations
Whom Y. Kim trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Y. Kim overall
Papers from Y. Kim's perspective
Ordered by how strongly the researchers Y. Kim trusts endorse each paper. Same corpus, a different order for every researcher.
- Novel ferroelectric FET based synapse for neuromorphic systems (Symposium on VLSI Technology)
- Ferroelectricity in hafnium oxide thin films
- Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories (2013 IEEE International Electron Devices Meeting)
- A review of recent MOSFET threshold voltage extraction methods (Microelectronics and reliability)
- Self-Consistent Equations Including Exchange and Correlation Effects
- Physical properties of crystals
- AND T
- A Dielectric Polymer with High Electric Energy Density and Fast Discharge Speed (Science)
- Ferroelectricity revisited—Advances in materials and physics
- Energy harvesting based on Ericsson pyroelectric cycles in a relaxor ferroelectric ceramic
Their papers
- Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes (2013) — 171 citations
- Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer (2014) — 250 citations
- The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity (2014) — 372 citations
- Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric HfxZr1−xO2 films (2015) — 195 citations
- Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling (2015) — 152 citations
- Study on the degradation mechanism of the ferroelectric properties of thin Hf0.5Zr0.5O2 films on TiN and Ir electrodes (2014) — 156 citations
- Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2 films on TiN bottom and TiN or RuO2 top electrodes (2014) — 138 citations
- Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature (2013) — 725 citations