Ferroelectricity in hafnium oxide thin films

By T. Böscke, Johannes Müller, D. Bräuhaus, U. Schröder, Ulrich Böttger. 2011

2,377 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/0e409a8bc268281b47051d35dcf86231cee4bad7

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Uwe Schroeder
2. Thomas Mikolajick
3. Daniele Ielmini
4. Tony Schenk
5. James M. LeBeau
6. E. Grimley
7. Stefan Slesazeck
8. H. Philip Wong

In Materials Chemistry

1. Uwe Schroeder
2. Thomas Mikolajick
3. Stefan Slesazeck
4. Tony Schenk
5. H. Philip Wong
6. James M. LeBeau
7. E. Grimley
8. Patrick Polakowski

Citations in the corpus

• Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering (2021, background): “Introduction Since the discovery of ferroelectric properties in HfO2-based materials [1], numerous technological advantages, such as a simple structure, a strong binding energy between the oxygen and transition metal ions, a wide bandgap (~ 5.”