Masataka Higashiwaki
Electronic, Optical and Magnetic Materials · 2012–2018
A researcher in the Science corpus: 24 papers; trusts 8 researchers and is trusted by 22 researchers here, as inferred from the citation graph.
Subfields
- Electronic, Optical and Magnetic Materials — 266 citations into it; #173 of 2,886 by trust here, #310 by citations
- Materials Chemistry — 257 citations into it; #1,196 of 11,513 by trust here, #1,024 by citations
- Renewable Energy, Sustainability and the Environment — 175 citations into it; #3,128 of 5,212 by trust here, #1,012 by citations
Whom Masataka Higashiwaki trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
- Kohei Sasaki
- Akito Kuramata
- J. Varley
- Z. Galazka
- T. Masui
- Man Hoi Wong
- Shigenobu Yamakoshi
- Y. Oshima
- Hisashi Murakami
- A. Janotti
Who trusts Masataka Higashiwaki overall
- Hongpeng Zhang
- Z. Galazka
- Akito Kuramata
- Kohei Sasaki
- H. von Wenckstern
- Lei Yuan
- E. Ahmadi
- M. Baldini
- Jiancheng Yang
- Man Hoi Wong
Papers from Masataka Higashiwaki's perspective
Ordered by how strongly the researchers Masataka Higashiwaki trusts endorse each paper. Same corpus, a different order for every researcher.
- Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
- Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy
- Semiconductor Power Devices: Physics, Characteristics, Reliability
- Fundamentals of Power Semiconductor Devices
- III-Nitride Ultraviolet Emitters: Technology and Applications
- Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications
- 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs (IEEE Electron Device Letters)
- High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
- High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure
- State-of-the-art technologies of gallium oxide power devices
Their papers
- Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates (2012) — 1,532 citations
- Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts (2013) — 232 citations
- Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics (2013) — 670 citations
- Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V (2016) — 451 citations
- 1-kV vertical Ga2O3 field-plated Schottky barrier diodes (2017) — 508 citations
- Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy (2015) — 252 citations
- $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates (2013) — 173 citations
- State-of-the-art technologies of gallium oxide power devices (2017) — 260 citations
- First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes (2017) — 141 citations
- Development of gallium oxide power devices (2014) — 510 citations
- Recent progress in Ga2O3 power devices (2016) — 869 citations
- Anisotropic thermal conductivity in single crystal β-gallium oxide (2014) — 514 citations
- Acceptor doping of β-Ga2O3 by Mg and N ion implantations (2018) — 184 citations
- Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions (2014) — 197 citations
- Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy (2014) — 265 citations
- Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges (2018) — 1,374 citations
- Optical signatures of deep level defects in Ga2O3 (2018) — 141 citations
- Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties (2018) — 178 citations
- Guest Editorial: The dawn of gallium oxide microelectronics (2018) — 597 citations
- Current status of Ga2O3 power devices (2016) — 139 citations