High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure
By Xiaodong Yan, I. Esqueda, Jiahui Ma, J. Tice, Han Wang. 2018
137 citations recorded by the source corpus.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/5babe4687879deb377d723aefbc46707ce9f6c5e
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electronic, Optical and Magnetic Materials
- Uttam Singisetti
- Akito Kuramata
- Kohei Sasaki
- Ke Zeng
- Masataka Higashiwaki
- Z. Galazka
- Shigenobu Yamakoshi
In Materials Chemistry
- Uttam Singisetti
- Akito Kuramata
- Kohei Sasaki
- Ke Zeng
- Debdeep Jena
- Huili Grace Xing
- Masataka Higashiwaki
- Z. Galazka
Citations in the corpus
- Field-Plated Lateral $\beta$ -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2 (2018, unknown): “[13].”
- 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs (2018, background): “1 MV/cm in vertical Schottky barrier diodes [9], [12].”
- Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV (2018, background): “2 MV/cm [4], [5] already exceeds that of SiC and GaN [6], and electron mobility of 100-150 cm2/Vs has been achieved in both bulk substrates [7] as well as epitaxial layers [8].”