Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts

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High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm (2016, background): “9 eV has been identified as a promising contender for the next generation power devices [1]–[8].”
$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation (2017, background): “It has recently been shown that β-Ga2O3 can be doped to degenerate levels with donor concentrations greater than 1 × 1019 cm−3 [8], [12]–[15].”
Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, background): “[134] achieved ohmic behavior of Ga2O3/Ti/Au with the lowest specific contact resistance and resistivity of 4.”
Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V (2016, background): “A Si-ion (Si+) implantation doping technique for fabricating single-crystal n-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) on unintentionally-doped (UID) epilayers has been established to realize low contact resistance and reliable channel conductivity [7], leading to promising”