Z. Galazka
Electronic, Optical and Magnetic Materials · 2010–2018
A researcher in the Science corpus: 15 papers; trusts 16 researchers and is trusted by 3 researchers here, as inferred from the citation graph.
Subfields
- Electronic, Optical and Magnetic Materials — 190 citations into it; #1,501 of 2,886 by trust here, #500 by citations
- Materials Chemistry — 186 citations into it; #8,059 of 11,513 by trust here, #1,675 by citations
- Renewable Energy, Sustainability and the Environment — 111 citations into it; #4,521 of 5,212 by trust here, #1,172 by citations
Whom Z. Galazka trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
- Masataka Higashiwaki
- Kohei Sasaki
- Akito Kuramata
- J. Varley
- M. Baldini
- S. Nakagomi
- Y. Kokubun
- V. Bermudez
- Y. Oshima
- Hisashi Murakami
Who trusts Z. Galazka overall
- M. Baldini
- Hongpeng Zhang
- Matthew D. McCluskey
- Masataka Higashiwaki
- Lei Yuan
- H. von Wenckstern
- Akito Kuramata
- Mengwei Si
Papers from Z. Galazka's perspective
Ordered by how strongly the researchers Z. Galazka trusts endorse each paper. Same corpus, a different order for every researcher.
- Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
- 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs (IEEE Electron Device Letters)
- The formation of molecular clouds in spiral galaxies
- Electric Field Effect in Atomically Thin Carbon Films (Science)
- High-performance single layered WSe₂ p-FETs with chemically doped contacts. (Nano letters (Print))
- Single-layer MoS2 transistors. (Nature Nanotechnology)
- Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V (IEEE Electron Device Letters)
- High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals (Nature Communications)
- Fabrication of ultralong and electrically uniform single-walled carbon nanotubes on clean substrates. (Nano letters (Print))
- Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior
Their papers
- 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs (2016) — 427 citations
- Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage (2016) — 318 citations
- Czochralski growth and characterization of β‐Ga2O3 single crystals (2010) — 413 citations
- $\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation (2017) — 214 citations
- High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes (2013) — 346 citations
- Scaling-Up of Bulk β-Ga2O3 Single Crystals by the Czochralski Method (2017) — 348 citations
- Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE (2014) — 165 citations
- Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3 (2012) — 317 citations
- On the bulk β-Ga2O3 single crystals grown by the Czochralski method (2014) — 550 citations
- The electronic structure of β-Ga2O3 (2010) — 169 citations
- Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method (2011) — 486 citations
- β-Ga2O3 for wide-bandgap electronics and optoelectronics (2018) — 358 citations
- Recent progress in the growth of β-Ga2O3 for power electronics applications (2017) — 245 citations
- Homoepitaxial growth of β‐Ga2O3 layers by metal‐organic vapor phase epitaxy (2014) — 176 citations
- Experimental electronic structure of In2O3 and Ga2O3 (2011) — 316 citations