Recent progress in Ga2O3 power devices

By Masataka Higashiwaki, Kohei Sasaki, Hisashi Murakami, Yoshinao Kumagai, A. Koukitu, Akito Kuramata, T. Masui, Shigenobu Yamakoshi. 2016

869 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment

View Paper: https://www.semanticscholar.org/paper/f602bb5537590554a28acf2721e0747b99a01ef4

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electronic, Optical and Magnetic Materials

1. Uttam Singisetti
2. Ke Zeng
3. Lei Yuan
4. Yuming Zhang
5. Hongpeng Zhang
6. Xiaoyan Tang
7. Jichao Hu
8. Jianwu Sun

In Materials Chemistry

1. Uttam Singisetti
2. Ke Zeng
3. Lei Yuan
4. Yuming Zhang
5. Hongpeng Zhang
6. Xiaoyan Tang
7. Jichao Hu
8. Jianwu Sun

In Renewable Energy, Sustainability and the Environment

1. Lei Yuan
2. Yuming Zhang
3. Hongpeng Zhang
4. Xiaoyan Tang
5. Jichao Hu
6. Jianwu Sun
7. Renxu Jia
8. Yimen Zhang

Citations in the corpus

• Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, background): “to the preferential variation of oxygen [5], [61], [66], [134], [142].”
• 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs (2018, background): “tronics applications due to its high Baliga’s Figure of Merit (BFoM) [1], and also due to the mature bulk crystal growth technologies [2]–[3].”