Jiancheng Yang
Electronic, Optical and Magnetic Materials · with Kim · 2017–2019
A researcher in the Science corpus: 4 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Electronic, Optical and Magnetic Materials — 163 citations into it
- Materials Chemistry — 158 citations into it
Whom Jiancheng Yang trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Papers from Jiancheng Yang's perspective
Ordered by how strongly the researchers Jiancheng Yang trusts endorse each paper. Same corpus, a different order for every researcher.
- Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
- Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy
- 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs (IEEE Electron Device Letters)
- Semiconductor Power Devices: Physics, Characteristics, Reliability
- High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
- High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure
- State-of-the-art technologies of gallium oxide power devices
- Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
- Fundamentals of Power Semiconductor Devices
- III-Nitride Ultraviolet Emitters: Technology and Applications
Their papers
- A review of Ga2O3 materials, processing, and devices (2018) — 2,585 citations
- Radiation damage effects in Ga2O3 materials and devices (2019) — 173 citations
- High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3 (2017) — 169 citations
- 2300V Reverse Breakdown Voltage Ga2O3 Schottky Rectifiers (2018) — 170 citations