III-Nitride Ultraviolet Emitters: Technology and Applications

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Recent Development of Boron Nitride towards Electronic Applications (2017, background): “01% with decreasing wavelength in the UVC range (200–290 nm).[12] Such low efficiencies limit the practical application of AlGaN-based deep-UV emitters.”
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges (2018, background): “[39] AlN substrates are the more promising current possibility.[40,41] On such substrates, higher-Al-content AlGaN heterostructures can be grown with relatively lower strain.”