Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
By T. Kamimura, Kohei Sasaki, Man Hoi Wong, D. Krishnamurthy, Akito Kuramata, T. Masui, Shigenobu Yamakoshi, Masataka Higashiwaki. 2014
197 citations recorded by the source corpus.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment
View Paper: https://www.semanticscholar.org/paper/5d2ae6e82e2b663dcac34cd705de6042a484f81e
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In Electronic, Optical and Magnetic Materials
In Materials Chemistry
In Renewable Energy, Sustainability and the Environment
Citations in the corpus
- Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, background): “[105] V. D. Wheeler, D. I. Shahin, M. J. Tadjer, and C. R. Eddy, “Band alignments of atomic layer deposited ZrO2 and HfO2 high-k dielectrics with (−201) β-Ga2O3”, ECS J. Solid State Sci. Technol., vol. 6, no. 2, pp. 3052–3055, Dec. 2017, doi: 10.1149/2.0131702jss. [106] P. H. Carey IV and F. Ren, “C”