E. Ahmadi

Electronic, Optical and Magnetic Materials · 2013–2019

A researcher in the Science corpus: 6 papers; trusts 4 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom E. Ahmadi trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Kohei Sasaki
  2. Masataka Higashiwaki
  3. Akito Kuramata
  4. Man Hoi Wong
  5. Y. Oshima

Papers from E. Ahmadi's perspective

Ordered by how strongly the researchers E. Ahmadi trusts endorse each paper. Same corpus, a different order for every researcher.

  1. N-polar GaN epitaxy and high electron mobility transistors
  2. Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
  3. 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs (IEEE Electron Device Letters)
  4. Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy
  5. High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure
  6. High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
  7. Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
  8. State-of-the-art technologies of gallium oxide power devices
  9. High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth
  10. Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V (IEEE Electron Device Letters)

Their papers