Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

By Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata, T. Masui, Shigenobu Yamakoshi. 2012

1,532 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/3671c8ce7197f8b92093c06fd90841dd1f9a2e5e

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In Electronic, Optical and Magnetic Materials

In Materials Chemistry

Citations in the corpus

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs (2016, neutral): “Material constants were taken from [1].”
$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates (2013, background): “The RIE treatment changes the electrode properties from Schottky to ohmic and significantly decreases the contact resistance [2].”
Growth of β-Ga2O3 single crystals using vertical Bridgman method in ambient air (2016, background): “It is expected to be useful in future power devices featuring high power, high breakdown voltage and high current density [3-5].”
Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/ $R_{\text{on,sp}}$ of up to 0.95 GW/cm2 (2020, background): “On top of the ultra-high critical electric-field (Ec) of ∼8 MV/cm [1], [2], which leads to a projected Baliga’s figure-of-merit (FOM) higher than those of SiC and GaN [1], β-Ga2O3 enjoys readily available melt-grown substrates [3], which enable highquality homoepitaxy as well as a potentially low-co”
High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm (2016, background): “The measurements start from applying the back-gate bias (VGS) to 120 V and then stepping to the device pinch-off −110 V with −10 V as the step, while the drain bias (VDS) is swept from 0 to 8 V. Maximum drain current densities (IDMAX) of 600 mA/mm is obtained, which is nearly one order of magnitude ”