Lei Yuan

Materials Chemistry · with Zhang · 2020

A researcher in the Science corpus: 2 papers; trusts 6 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

• Materials Chemistry — 77 citations into it
• Electronic, Optical and Magnetic Materials — 73 citations into it
• Renewable Energy, Sustainability and the Environment — 38 citations into it
• Electrical and Electronic Engineering — 21 citations into it

Whom Lei Yuan trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Kohei Sasaki
2. Akito Kuramata
3. Masataka Higashiwaki
4. Tsunenobu Kimoto
5. Man Hoi Wong
6. Z. Galazka

Papers from Lei Yuan's perspective

Ordered by how strongly the researchers Lei Yuan trusts endorse each paper. Same corpus, a different order for every researcher.

1. Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
2. 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs (IEEE Electron Device Letters)
3. High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
4. State-of-the-art technologies of gallium oxide power devices
5. High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth
6. Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V (IEEE Electron Device Letters)
7. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
8. Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts
9. Fundamentals of Power Semiconductor Devices
10. 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs (IEEE Electron Device Letters)

Their papers

• Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020) — 141 citations
• Self-powered photodetectors based on β-Ga2O3/4H–SiC heterojunction with ultrahigh current on/off ratio and fast response (2020) — 173 citations