Shigenobu Yamakoshi
Electronic, Optical and Magnetic Materials · 2012–2018
A researcher in the Science corpus: 17 papers; trusts 4 researchers and is trusted by 24 researchers here, as inferred from the citation graph.
Subfields
- Electronic, Optical and Magnetic Materials — 136 citations into it; #152 of 2,886 by trust here, #327 by citations
- Materials Chemistry — 130 citations into it; #1,000 of 11,513 by trust here, #1,024 by citations
- Renewable Energy, Sustainability and the Environment — 102 citations into it; #2,157 of 5,212 by trust here, #885 by citations
Whom Shigenobu Yamakoshi trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Shigenobu Yamakoshi overall
Papers from Shigenobu Yamakoshi's perspective
Ordered by how strongly the researchers Shigenobu Yamakoshi trusts endorse each paper. Same corpus, a different order for every researcher.
- Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
- Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy
- High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure
- High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
- State-of-the-art technologies of gallium oxide power devices
- Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
- 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs (IEEE Electron Device Letters)
- 1-kV vertical Ga2O3 field-plated Schottky barrier diodes
- High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth
- Semiconductor Power Devices: Physics, Characteristics, Reliability
Their papers
- Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates (2012) — 1,532 citations
- Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy (2012) — 405 citations
- Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts (2013) — 232 citations
- Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics (2013) — 670 citations
- High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth (2016) — 667 citations
- Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V (2016) — 451 citations
- 1-kV vertical Ga2O3 field-plated Schottky barrier diodes (2017) — 508 citations
- $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates (2013) — 173 citations
- First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes (2017) — 141 citations
- Development of gallium oxide power devices (2014) — 510 citations
- Recent progress in Ga2O3 power devices (2016) — 869 citations
- Acceptor doping of β-Ga2O3 by Mg and N ion implantations (2018) — 184 citations
- Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions (2014) — 197 citations
- Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy (2014) — 265 citations
- Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties (2018) — 178 citations
- Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy (2016) — 318 citations
- Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals (2015) — 145 citations