Fundamentals of Power Semiconductor Devices

By B. Baliga. 2008

2,079 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/2017e197153ce11096335f43333441c4c5389b12

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In Electrical and Electronic Engineering

Citations in the corpus

Physics-of-Failure, Condition Monitoring, and Prognostics of Insulated Gate Bipolar Transistor Modules: A Review (2015, background): “This failure is irreversible and it is called “latch-up” [40].”
Modeling of Soft-Switching Losses of IGBTs in High-Power High-Efficiency Dual-Active-Bridge DC/DC Converters (2013, methodology): “This difference can be explained by light dependence of parameter Kp0 with respect to conducted current is(t), as described in [20] and [22].”
Planar Nearly Ideal Edge-Termination Technique for GaN Devices (2011, background): “The relation between the breakdown voltage and the critical electric field EC for a punchthrough structure is given by [3]”
GaN Technology for Power Electronic Applications: A Review (2016, background): “Properties of semiconductor materials relevant to power devices include bandgap (Eg), critical field strength (Ec), carrier mobility (l), and thermal conductivity.(2) The bandgap of a material determines the carriers generated in the depletion region of a semiconductor device; a larger bandgap corre”
Technology developments and first measurements of Low Gain Avalanche Detectors (LGAD) for high energy physics applications (2014, background): “In addition, the voltage capability of the devices is significantly increased to a 95% of the value expected for a planar junction [12].”
Characterization and Experimental Assessment of the Effects of Parasitic Elements on the MOSFET Switching Performance (2013, background): “Power MOSFETs have found the most extensive application in high-frequency power converters [1].”
Vertical Power p-n Diodes Based on Bulk GaN (2015, background): “FOM captures and formulates the conflicting requirements between the device specific resistance (Rsp) versus the device breakdown voltage (BV) as BV(2)/Rsp ∼ μn EC 3, where μn is the mobility for electrons and EC is the critical electric field at which breakdown occurs [23], [24].”
Materials and processing issues in vertical GaN power electronics (2017, background): “From electrostatics, the breakdown voltage (BV) can be described as [27]”
Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, background): “transistor [196]–[198], and the initial Si vertical double-diffused MOSFET [199].”
Advanced Power MOSFET Concepts (2010, methodology): “However, the much stronger (cubic) dependence of the on-resistance on the critical electric field for breakdown favors wide band gap semiconductors such as silicon carbide [2].”
A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices (2020, background): “material, the drift region resistance can be approximated as [8]”
High Switching Performance of 1700-V, 50-A SiC Power MOSFET Over Si IGBT/BiMOSFET for Advanced Power Conversion Applications (2016, background): “Generally, due to conductivity modulation of the drift region, the on-state voltage drop of Si IGBT is quite low [28].”