Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
By Kohei Sasaki, Akito Kuramata, T. Masui, E. Víllora, K. Shimamura, Shigenobu Yamakoshi. 2012
405 citations recorded by the source corpus.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment
View Paper: https://www.semanticscholar.org/paper/dea9cfe37df6e1c3ec692bee11a20303a75082e3
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In Electronic, Optical and Magnetic Materials
- Z. Galazka
- Masataka Higashiwaki
- Akito Kuramata
- Shigenobu Yamakoshi
- Lei Yuan
- Yuming Zhang
- Renxu Jia
- Hongpeng Zhang
In Materials Chemistry
- Z. Galazka
- Masataka Higashiwaki
- Akito Kuramata
- Shigenobu Yamakoshi
- Lei Yuan
- Yuming Zhang
- Renxu Jia
- Hongpeng Zhang
In Renewable Energy, Sustainability and the Environment
- Z. Galazka
- Masataka Higashiwaki
- Akito Kuramata
- Shigenobu Yamakoshi
- Kohei Sasaki
- Lei Yuan
- Yuming Zhang
- Renxu Jia
Citations in the corpus
- $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates (2013, background): “The electron mobility is experimentally estimated to be 300 cm(2)/(V · s) for the range of electron density from 10(15) to 10(16) cm−3, which is a typical range used for the drift layer of vertical power devices [3].”