Hisashi Murakami
Electronic, Optical and Magnetic Materials · 2014–2018
A researcher in the Science corpus: 9 papers; trusts 5 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Electronic, Optical and Magnetic Materials — 143 citations into it
- Materials Chemistry — 139 citations into it
Whom Hisashi Murakami trusts overall
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Who trusts Hisashi Murakami overall
Papers from Hisashi Murakami's perspective
Ordered by how strongly the researchers Hisashi Murakami trusts endorse each paper. Same corpus, a different order for every researcher.
- Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
- Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy
- 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs (IEEE Electron Device Letters)
- High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure
- High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
- State-of-the-art technologies of gallium oxide power devices
- Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
- Semiconductor Power Devices: Physics, Characteristics, Reliability
- Fundamentals of Power Semiconductor Devices
- III-Nitride Ultraviolet Emitters: Technology and Applications
Their papers
- 1-kV vertical Ga2O3 field-plated Schottky barrier diodes (2017) — 508 citations
- State-of-the-art technologies of gallium oxide power devices (2017) — 260 citations
- Recent progress in Ga2O3 power devices (2016) — 869 citations
- Acceptor doping of β-Ga2O3 by Mg and N ion implantations (2018) — 184 citations
- Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy (2014) — 265 citations
- Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties (2018) — 178 citations
- Current status of Ga2O3 power devices (2016) — 139 citations
- Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy (2016) — 318 citations
- Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals (2015) — 145 citations