3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs

By A. Green, K. Chabak, E. Heller, R. Fitch, M. Baldini, A. Fiedler, K. Irmscher, Günter Wagner, Z. Galazka, S. Tetlak and 3 more. IEEE Electron Device Letters, 2016

427 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/780fdcedf3d48ac0b68699d2dd3a180a3c8b7bdf

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The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electronic, Optical and Magnetic Materials

1. Z. Galazka
2. Akito Kuramata
3. Lei Yuan
4. Yuming Zhang
5. Renxu Jia
6. Hongpeng Zhang
7. Xiaoyan Tang
8. Jichao Hu

In Materials Chemistry

1. Z. Galazka
2. Lei Yuan
3. Yuming Zhang
4. Renxu Jia
5. Hongpeng Zhang
6. Xiaoyan Tang
7. Jichao Hu
8. Jianwu Sun

Citations in the corpus

• Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, methodology): “For breakdown characteristics of D-mode Ga2O3 planar MOSFETs, the breakdown electric field of 3.8 MV/cm [24], and the blocking voltages of 1850 [171] and 2321 V [27] have been reported over the past four years.”
• Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV (2018, background): “The experimentally reported critical electric field up to 5.2 MV/cm [4], [5] already exceeds that of SiC and GaN [6], and electron mobility of 100-150 cm2/Vs has been achieved in both bulk substrates [7] as well as epitaxial layers [8].”
• 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs (2018, methodology): “age breakdown strength is also calculated by dividing net gate-drain voltage (VB R-Vg) over Lgd [8] and is displayed in Fig.”
• $\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation (2017, background): “: β-GA2O3 MOSFETS FOR RADIO FREQUENCY OPERATION 791 half of the original channel layer was etched leaving ∼90 nm of epitaxy as measured by surface profilometry.”