Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
By J. Tsao, Srabanti Chowdhury, Mark Hollis, Debdeep Jena, N. Johnson, K. Jones, R. Kaplar, S. Rajan, C. D. Walle, E. Bellotti and 23 more. 2018
1,374 citations recorded by the source corpus.
Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices, and applications. Because many figures‐of‐merit for device performance scale nonlinearly with bandgap, these semiconductors have long been known to have compelling potential advantages over their narrower‐bandgap cousins in high‐power and RF electronics, as well as in deep‐UV optoelectronics, quantum information, and extreme‐environment applications. Only recently, however, have the UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility. In this article, the materials, physics, device and application research opportunities and challenges for advancing their state of the art are surveyed.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/00183baa8bd5f772c60b47d615b78246ee4b7682
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In Electronic, Optical and Magnetic Materials
Citations in the corpus
- Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective (2023, background): “ations, scalability and the high cost of producing large-area single-crystal substrates [13, 166].”