Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy

By T. Onuma, S. Saito, Kohei Sasaki, T. Masui, T. Yamaguchi, T. Honda, Masataka Higashiwaki. 2015

252 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment

View Paper: https://www.semanticscholar.org/paper/52bb48e799a7fa88fd7a57899eb2deba338fa8f1

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electronic, Optical and Magnetic Materials

1. Masataka Higashiwaki
2. Akito Kuramata
3. Shigenobu Yamakoshi
4. Kohei Sasaki
5. Man Hoi Wong
6. Z. Galazka
7. H. von Wenckstern
8. Lei Yuan

In Materials Chemistry

1. Masataka Higashiwaki
2. Akito Kuramata
3. Shigenobu Yamakoshi
4. Kohei Sasaki
5. Man Hoi Wong
6. Z. Galazka
7. H. von Wenckstern
8. Lei Yuan

In Renewable Energy, Sustainability and the Environment

1. Masataka Higashiwaki
2. Akito Kuramata
3. Shigenobu Yamakoshi
4. Kohei Sasaki
5. Z. Galazka

Citations in the corpus

• First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes (2017, background): “9 eV [1]–[4], and its electric field strength is”
• Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V (2016, background): “9 eV [1]–[3] and the availability of economical device-quality native substrates – is a strong contender for future power devices including Schottky barrier diodes [4], [5] and field-effect transistors [6].”