T. Masui
Materials Chemistry · 2012–2016
A researcher in the Science corpus: 10 papers; trusts 2 researchers and is trusted by 19 researchers here, as inferred from the citation graph.
Subfields
- Materials Chemistry — 83 citations into it; #1,557 of 11,513 by trust here, #1,486 by citations
- Electronic, Optical and Magnetic Materials — 82 citations into it; #235 of 2,886 by trust here, #489 by citations
Whom T. Masui trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts T. Masui overall
Papers from T. Masui's perspective
Ordered by how strongly the researchers T. Masui trusts endorse each paper. Same corpus, a different order for every researcher.
- Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
- Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy
- 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs (IEEE Electron Device Letters)
- High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure
- High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
- State-of-the-art technologies of gallium oxide power devices
- Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
- Semiconductor Power Devices: Physics, Characteristics, Reliability
- Fundamentals of Power Semiconductor Devices
- III-Nitride Ultraviolet Emitters: Technology and Applications
Their papers
- Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates (2012) — 1,532 citations
- Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy (2012) — 405 citations
- Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts (2013) — 232 citations
- Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics (2013) — 670 citations
- High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth (2016) — 667 citations
- $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates (2013) — 173 citations
- Development of gallium oxide power devices (2014) — 510 citations
- Recent progress in Ga2O3 power devices (2016) — 869 citations
- Anisotropic thermal conductivity in single crystal β-gallium oxide (2014) — 514 citations
- Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions (2014) — 197 citations