State-of-the-art technologies of gallium oxide power devices

By Masataka Higashiwaki, Akito Kuramata, Hisashi Murakami, Yoshinao Kumagai. 2017

260 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/8fe3e9310f2c19fdc170b0e311a270e5610b7676

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Debdeep Jena
2. Lei Yuan
3. Yuming Zhang
4. Hongpeng Zhang
5. Xiaoyan Tang
6. Jichao Hu
7. Jianwu Sun
8. Renxu Jia

In Electronic, Optical and Magnetic Materials

1. Lei Yuan
2. Yuming Zhang
3. Renxu Jia
4. Hongpeng Zhang
5. Xiaoyan Tang
6. Jichao Hu
7. Jianwu Sun
8. Yimen Zhang

In Materials Chemistry

1. Lei Yuan
2. Yuming Zhang
3. Renxu Jia
4. Hongpeng Zhang
5. Xiaoyan Tang
6. Jichao Hu
7. Jianwu Sun
8. Yimen Zhang

Citations in the corpus

• Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, background): “However, the hardness of Ga2O3 is mitigated with successive realization of large crystal boules (4-in single crystal [66], [67] up to now), and its price is also expected to be accepted by the industry, just like sapphire.”
• Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV (2018, background): “The experimentally reported critical electric field up to 5.2 MV/cm [4], [5] already exceeds that of SiC and GaN [6], and electron mobility of 100-150 cm2/Vs has been achieved in both bulk substrates [7] as well as epitaxial layers [8].”