High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

By W. Hwang, A. Verma, H. Peelaers, V. Protasenko, S. Rouvimov, Huili Grace Xing, Alan C. Seabaugh, Wilfried E. Haensch, C. D. Walle, Z. Galazka and 3 more. 2013

346 citations recorded by the source corpus.

Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor applications is power electronics for which transistors capable of switching very high voltages are necessary. Miniaturization of energy-efficient power switches can enable the integration with various electronic systems and lead to substantial boosts in energy efficiency. Nanotechnology is yet to have an impact in this arena. In this work, it is demonstrated that nanomembranes of the wide-bandgap semiconductor gallium oxide can be used as channels of transistors capable of switching high voltages, and at the same time can be integrated on any platform. The findings mark a step towards using lessons learnt in nanomaterials and nanotechnology to address a challenge that yet remains untouched by the field.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/6b968aea523a49ae6a17976e92472053a2a41417

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Mengwei Si
2. Peide D. Ye
3. Debdeep Jena
4. Lei Yuan
5. Yuming Zhang
6. Hongpeng Zhang
7. Xiaoyan Tang
8. Jichao Hu

In Electronic, Optical and Magnetic Materials

1. Lei Yuan
2. Yuming Zhang
3. Renxu Jia
4. Hongpeng Zhang
5. Xiaoyan Tang
6. Jichao Hu
7. Jianwu Sun
8. Yimen Zhang

Citations in the corpus

• Field-Plated Lateral $\beta$ -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2 (2018, background): “23 Å along [100] direction, which allows a facile cleavage into thin belts or nano-membranes [17]–[20].”
• Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, background): “[136], [137], [143], [181], [182] channels, since p-type doping to realize inversion-mode normally OFF operation remains a challenge [4].”