Semiconductor Power Devices: Physics, Characteristics, Reliability

By J. Lutz, H. Schlangenotto, U. Scheuermann, R. D. Doncker. 2011

494 citations recorded by the source corpus.

View Paper: https://www.semanticscholar.org/paper/180f5cca35957c741a1c41f63f88668817ac5269

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

1. Srabanti Chowdhury
2. Marko J. Tadjer
3. J. Tsao
4. Umesh K. Mishra
5. Alex Q. Huang
6. Masataka Higashiwaki
7. Mike E. Coltrin
8. Debdeep Jena

Citations in the corpus

• Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges (2018, background): “2018, 4, 1600501 In general, for UWBG materials to have impact on these applications, vertical device structures[90,214,215] similar to those utilized today for Si and SiC will need to be developed.”
• A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs (2016, unknown): “Using formulas and values reported in [24], [34], and [35], it is possible to carry out an approximate estimation of the leakage current as a function of temperature”
• Review of Silicon Carbide Power Devices and Their Applications (2017, background): “reverse bias are the three major criteria for evaluating reliability [43].”