Man Hoi Wong
Electronic, Optical and Magnetic Materials · 2012–2018
A researcher in the Science corpus: 7 papers; trusts 3 researchers and is trusted by 2 researchers here, as inferred from the citation graph.
Subfields
- Electronic, Optical and Magnetic Materials — 81 citations into it; #1,917 of 2,886 by trust here, #1,090 by citations
- Materials Chemistry — 61 citations into it
- Condensed Matter Physics — 58 citations into it; #1,485 of 1,948 by trust here, #1,196 by citations
- Electrical and Electronic Engineering — 38 citations into it; #12,505 of 16,539 by trust here, #11,641 by citations
Whom Man Hoi Wong trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Man Hoi Wong overall
Papers from Man Hoi Wong's perspective
Ordered by how strongly the researchers Man Hoi Wong trusts endorse each paper. Same corpus, a different order for every researcher.
- Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
- Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy
- AlGaN/GaN current aperture vertical electron transistors with regrown channels
- Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
- A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
- Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
- 30-W/mm GaN HEMTs by field plate optimization (IEEE Electron Device Letters)
- Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
- High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates (IEEE Electron Device Letters)
- Fundamentals of Power Semiconductor Devices
Their papers
- Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics (2013) — 670 citations
- Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V (2016) — 451 citations
- Acceptor doping of β-Ga2O3 by Mg and N ion implantations (2018) — 184 citations
- Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions (2014) — 197 citations
- CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion (2012) — 166 citations
- N-polar GaN epitaxy and high electron mobility transistors (2013) — 200 citations
- Current status and scope of gallium nitride-based vertical transistors for high-power electronics application (2013) — 144 citations