Development of gallium oxide power devices
By Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata, T. Masui, Shigenobu Yamakoshi. 2014
510 citations recorded by the source corpus.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment
View Paper: https://www.semanticscholar.org/paper/884d41892b6644e56ccc8bc73317940c96c697a2
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In Electronic, Optical and Magnetic Materials
In Materials Chemistry
In Renewable Energy, Sustainability and the Environment
Citations in the corpus
- Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, background): “As shown in Table I [4], [7], [8], β-Ga2O3 possesses the large Eg of 4.”
- Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy (2016, background): “Homoepitaxy of b-Ga2O3 thin films has been performed mainly by molecular beam epitaxy (MBE) leading to the fabrication of Schottky diodes and field-effect transistors (MESFETs) [1, 2, 4].”
- 1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes With an Ultra-Low Leakage Current Below $1~\mu$ A/cm2 (2020, background): “8 eV and high breakdown electric field (EC) [1], [2].”